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ptma180402m confidential, limited internal distribution all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! data sheet 1 of 14 rev. 08, 2011-08-10 -25 -20 -15 -10 -5 0 5 10 14 18 22 26 30 34 1700 1800 1900 2000 2100 2200 return loss (db) gain (db) frequency (mhz) broadband performance v dd =28v,i dq1 =160ma,i dq2 = 360 ma, fixture tuned for 1930 - 1990 mhz gain return loss rf characteristics cdma measurements (tested in in? neon production test ? xture) v dd = 28 v, i dq1 = 160 ma, i dq2 = 360 ma, p out = 4 w average, ? = 1960 mhz, cdma is-95, 9 channels characteristic symbol min typ max unit gain g ps 28 30 ? db drain efficiency d 14 16 ? % adjacent channel power ratio acpr ? ?52 ?50 dbc rf characteristics continued next page wideband rf ldmos integrated power ampli er 40 w, 28 v, 1800 ?2100 mhz description the ptma180402m is a matched, wideband, 2-stage, 40-watt ldmos integrated ampli? er intended for base station applications in the 1800 to 2100 mhz frequency band. this device is offered in a 20-pin, thermally-enhanced, overmolded plastic package for cool and reliable operation. ptma180402m package pg-dso-20-63 features ? designed for wide rf bandwidth and low memory effects ? on-chip matching, integrated input dc block, 50-ohm input and ~4-ohm output ? typical single-carrier cdma performance at 1960 mhz, 28 v - average output power = 5 w - linear gain = 30 db - ef? ciency = 16% - adjacent channel power = ?52 dbc ? typical two-tone cw performance at 1960 mhz, 28 v - output power (pep) = 40 w at imd3 = ?30 dbc - ef? ciency = 34% ? capable of handling 10:1 vswr @ 28 v, 40 w (cw) output power ? integrated esd protection. meets hbm class 1b (minimum), per jesd22-a114f ? thermally-enhanced, rohs-compliant package
ptma180402m confidential, limited internal distribution data sheet 2 of 14 rev. 08, 2011-08-10 rf characteristics (cont.) two-tone speci cations (not subject to production test?veri? ed by design/characterization in in? neon test ? xture) v dd = 28 v, i dq1 = 160 ma, i dq2 = 360 ma, p out = 40 w pep, ? = 1960 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps ? 30 ? db power added efficiency pae ? 34 ? % third order intermodulation distortion imd3 ? ?32 ? dbc dc characteristics stage 1 characteristics conditions symbol min typ max unit drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a on-state resistance stage 1 v gs = 10 v, v ds = 0.1 v r ds(on) ? 1.6 ? operating gate voltage v ds = 28 v, i dq1 = 160 ma, v gs 2.0 2.5 3.0 v stage 2 characteristics conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a on-state resistance stage 2 v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.21 ? operating gate voltage v ds = 28 v, i dq2 = 360 ma v gs 2.0 2.5 3.0 v
data sheet 3 of 14 rev. 08, 2011-08-10 ptma180402m confidential, limited internal distribution -32 -22 -12 -2 8 18 28 10 14 18 22 26 30 34 1700 1900 2100 2300 2500 input return loss (db) gain (db) frequency (mhz) broadband sweep v dd =28v,i dq1 =150ma,i dq2 =400ma, fixture tuned for 2110 - 2170 mhz gain irl 5 15 25 35 45 55 65 10 14 18 22 26 30 34 30 32 34 36 38 40 42 44 46 gain (db) output power (dbm) power sweep, p -1db v dd =28v,i dq1 =150ma,i dq2 =400ma 2110 mhz 2140 mhz 2170 mhz gain power added efficiency (%) power added effici ency maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 175 w above 25c derate by 1.0 w/c storage temperature range t stg ?40 to +150 c overall thermal resistance (t case = 70c, 40 w cw) stage 1 r jc 3.6 c/w p out = 40 w, i dq1 = 160 ma, i dq2 = 360 ma stage 2 r jc 1.5 c/w moisture sensitivity level level test standard package temperature unit 3 ipc/jedec j-std-020 260 c ordering information type and version package outline package description shipping ptma180402m v1 pg-dso-20-63 copper heat slug, plastic emc body tape typical performance, circuit tuned for 2140 mhz (data taken in infineon test fixture)
ptma180402m confidential, limited internal distribution data sheet 4 of 14 rev. 08, 2011-08-10 25 35 45 55 - 50 -40 -30 -20 ed efficiency (%) m d3 (dbc two-tone drive up v dd = 28 v, i dq1 = 150 ma, i dq2 = 400 ma, 1 mhz tone spacing 2110 mhz 2140 mhz 2170 mhz 5 15 25 -70 -60 - 50 29 31 33 35 37 39 41 43 45 power add i m average output power (dbm) power added efficiency 25 35 45 55 - 50 -40 -30 -20 d ed efficiency (%) m d3 (dbc) two-tone drive up v dd = 28 v, i dq1 = 150 ma, i dq2 = 400 ma, ? = 2140 mhz, 1 mhz tone spacing im3l 5 15 25 -70 -60 50 29 31 33 35 37 39 41 43 45 power ad d i m average output power (dbm) im3u power added efficiency broadband circuit impedance ?2140 mhz frequency z load ? mhz r jx 1900 5.76 ?6.18 1920 5.63 ?6.13 1940 5.51 ?6.09 1960 5.39 ?6.04 1980 5.27 ?5.99 2000 5.15 ?5.93 2020 5.03 ?5.88 2040 4.92 ?5.82 2060 4.80 ?5.76 2080 4.68 ?5.69 2100 4.57 ?5.63 2120 4.45 ?5.56 2140 4.34 ?5.49 2160 4.23 ?5.41 2180 4.12 ?5.34 2200 4.01 ?5.26 z load d s in 0.1 0.3 0.5 0.2 0.4 0 . 1 0 . 2 - w a v e l e n g < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 2200 mhz 1900 mhz z load z 0 = 50 ? typical performance, circuit tuned for 2140 mhz (cont.)
data sheet 5 of 14 rev. 08, 2011-08-10 ptma180402m confidential, limited internal distribution reference circuit, tuned for 2140 mhz reference circuit schematic for ? = 2140 mhz circuit description dut ptma180402m ldmos ic pcb rogers ro4350, 0.76 mm [.030"] thick, r = 3.48, 1 oz. copper test ? xture part no. ltn/ptma180402m find gerber ? les for this test ? xture on the in? neon web site at http://www.in? neon.com/rfpower circuit assembly information microstrip electrical characteristics dimensions: l x w (mm) dimensions: l x w (in.) at 2140 mhz ? 1 0.150 , 50.0 12.73 x 1.70 0.501 x 0.067 ? 2 0.177 , 50.0 15.04 x 1.70 0.592 x 0.067 ? 3 0.026 , 10.4 2.01 x 13.00 0.079 x 0.512 ? 4 0.026 , 10.4 2.06 x 13.00 0.081 x 0.512 ? 5 0.026 , 34.2 2.13 x 3.00 0.084 x 0.118 ? 6 0.054 , 34.2 4.45 x 3.00 0.175 x 0.118 ? 7 0.066 , 43.5 5.56 x 2.11 0.219 x 0.083 ? 8 0.178 , 43.5 14.96 x 2.11 0.589 x 0.083 ? 9 0.059 , 50.0 5.03 x 1.70 0.198 x 0.067 ? 10, ? 11 0.137 , 47.8 11.56 x 1.83 0.455 x 0.072 c1 100 f 50v r2 0 o c11 10 f q2 g1 g2 v r4 r1 0 o r3 v c7 10 f q1 v d1 c18 10 f c16 0.1 f c15 12pf c17 1 f c13 0.1 f c12 1 f c14 12pf c5 12pf " 1 c9 0.1 f c8 1 f c10 12pf j1 c3 1 f c2 10 f c4 0.1 f 18 3 ptma180402m 10 8 9 7 4 6 5 11 12 13 14 15 16 17 2 1 dut 19 20 " 9 c29 100 f 50v c27 1 f c25 12pf c26 0.1 f c28 10 f c19 100 f 50v c20 12pf c30 1.8pf " 4 c31 1.8pf d1 v " 3 " 11 " 5 " 10 c32 2.4pf " 6 " 7 c33 1.2pf " 8 c34 12pf c21 0.1 f c22 1 f c23 10 f j2 v d2 c24 100 f 50v " 2 c6 .5pf m a 1 8 0 4 0 2 m _ 2 1 4 0 m h z _ b d _ 9 - 2 - 0 9 rf_in rf_out
ptma180402m confidential, limited internal distribution data sheet 6 of 14 rev. 08, 2011-08-10 reference circuit ?2140 mhz (cont.) assembly diagram for 2140 mhz reference circuit (not to scale) component description suggested manufacturer p/n or comment c1, c19, c24, c29 electrolytic capacitor, 100 f, 50 v digi-key pce3718ct-nd c2, c7, c11, c18, ceramic capacitor, 10 f murata grm422y5v106z050al c23, c28 c3, c8, c12, c17, ceramic capacitor, 1 f digi-key 445-1411-2-nd c22, c27 c4, c9, c13, c16, capacitor, 0.1 f digi-key 399-1267-2-nd c21, c26 c5, c10, c12, c15, ceramic capacitor, 12 pf atc 600s120jt c20, c25, c34 c6 ceramic capacitor, 0.5 pf atc 100b 0r5 c30, c31 ceramic capacitor, 1.8 pf atc 600s1r8ct c32 ceramic capacitor, 2.4 pf atc 100b 2r4 c33 ceramic capacitor, 1.2 pf atc 100b 1r2 q1, q2 transistor in? neon technologies bcp56 r1, r2 resistor, 0 digi-key 603 r3, r4 potentiometer, 2k digi-key 3224w-202etr-nd c6 c33 r1 r2 c24 c23 c22 c21 c20 c29 c28 c27 c26 c25 c32 c34 c31 c30 c1 c2 c3 c4 c5 c19 c15 c16 c17 c18 c7 c8 c9 c13 c14 c10 c11 c12 ma180402m_2140 mhz_cd_9-2-09 v g2 v d1 v g1 v d2 v d2 v d1 rf_in rf_out r3 r4 q2 q1
data sheet 7 of 14 rev. 08, 2011-08-10 ptma180402m confidential, limited internal distribution 0 10 20 30 40 50 60 26 27 28 29 30 31 32 30 32 34 36 38 40 42 44 46 48 gain (db) output power (dbm) cw power perf ormance v dd =28v,i dq1 =130ma,i dq2 =360ma, ? = 1930, 1960, 1990 mhz 1930 mhz 1960 mhz 1990 mhz gain power added efficiency (%) efficiency 26 27 28 29 30 31 32 30 32 34 36 38 40 42 44 46 gain (db) output power (dbm) cw performance at selected drain voltage v dd =24v,28v,32v i d q1 =130ma,i d q2 = 360 ma, ? = 1960 mhz 24 v 32 v 28 v -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 30 32 34 36 38 40 42 44 46 imd3 (dbc) average output power ( dbm ) two-tone drive-up v dd =28v,i dq1 = 160 ma, i dq2 = 360 ma ? = 1930, 1960, 1990 mh z 1930 mhz 1960 mhz 1990 mhz efficiency imd3 power added efficiency (%) 0 5 10 15 20 25 30 -65 -60 -55 -50 -45 -40 -35 29 31 33 35 37 39 41 power added efficiency (%) output power (dbm) cdma is-95 drive-up, 3 frequencies v dd =28v,i dq1 =160,i dq2 =360ma, ? = 1930, 1960, 1990 mhz 1930 mhz 1960 mhz 1990 mhz adjacent channel power ratio (db) efficiency acpr power added efficiency power added efficiency power added efficiency typical performance, circuit tuned for 1960 mhz (data taken in a production test ? xture)
ptma180402m confidential, limited internal distribution data sheet 8 of 14 rev. 08, 2011-08-10 edge modulation performance v dd = 28 v, i dq1 = 160 ma, i dq2 = 360 ma ? = 1930 1960 1990 mhz -50 40 ? = 1930 , 1960 , 1990 mhz c) -60 -55 30 35 400 khz 1930 mhz 1960 mhz 1990 mhz c trum (db e ncy (%) -70 -65 20 25 a tion spe c d ed effici e - 80 -75 10 15 600 khz g e modul a p ower ad d power added efficiency -85 80 5 10 30 32 34 36 38 40 42 44 ed g p output power ( dbm ) - 40 -35 -30 -25 -20 15 20 25 30 35 m3 (dbc) two-carrier wcdma drive-up v dd = 28 v, i dq 1 = 160 ma, i dq2 = 360 ma, ? = 1930, 1960, 1990 mhz, par = 8 db, 10 mhz spacing, 3.84 mhz bandwidth 1930 mhz 1960 mhz 1990 mhz d ded efficiency (%) power added efficiency -50 -45 40 5 10 15 30 32 34 36 38 40 42 i output power ( dbm ) im3 power a d edge evm performance v dd = 28 v, i dq1 = 160 ma, i dq2 = 360 ma ? = 1930 1960 1990 mhz 3.5 40 ? 1930 , 1960 , 1990 mhz 2.5 3.0 30 35 d e (%) n cy (%) 1930 mhz 1960 mhz 1990 mhz 1.5 2.0 20 25 r magnitu d e d efficie n power added 05 1.0 10 15 r or vecto r evm o wer add e efficiency 0.0 0 . 5 5 10 30 32 34 36 38 40 42 44 er r p o output power ( dbm ) -35 -30 -25 -20 20 25 30 35 m 3 (dbc) two-carrier wcdma at selected temperatures v dd = 28 v, i dq1 = 160 ma, i dq2 = 360 ma, ? = 1960 mhz, par = 8 db, 10 mhz spacing, 3.84 mhz bandwidth 25c 90c ?25c power added efficiency d ded efficiency (%) -50 -45 -40 5 10 15 30 32 34 36 38 40 42 i m output power ( dbm ) im3 power a d typical performance ?960 mhz (cont.)
data sheet 9 of 14 rev. 08, 2011-08-10 ptma180402m confidential, limited internal distribution broadband circuit impedance ?1960 mhz z load d s in frequency z load ????? mhz r jx 1800 5.56 ?6.95 1810 5.48 ?6.91 1820 5.39 ?6.87 1830 5.31 ?6.83 1840 5.23 ?6.79 1850 5.15 ?6.75 1860 5.07 ?6.70 1870 4.99 ?6.66 1880 4.91 ?6.61 1890 4.84 ?6.56 1900 4.76 ?6.51 1910 4.69 ?6.47 1920 4.61 ?6.42 1930 4.54 ?6.36 1940 4.47 ?6.31 1950 4.40 ?6.26 1960 4.33 ?6.21 1970 4.26 ?6.15 1980 4.19 ?6.10 1990 4.12 ?6.04 2000 4.06 ?5.99 0.1 0.3 0.2 04 0 . 1 0 . 2 - w a v e l e n < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 2200 mhz 1800 mhz z load z 0 = 50 ?
ptma180402m confidential, limited internal distribution data sheet 10 of 14 rev. 08, 2011-08-10 reference circuit, tuned for 1960 mhz reference circuit schematic for ? = 1960 mhz circuit description dut ptma180402m ldmos ic pcb rogers ro4350, 0.76 mm [.030"] thick, r = 3.48, 1 oz. copper test fixture part no. ltn/ptma180402m find gerber ? les for this test ? xture on the in? neon web site at http://www.in? neon.com/rfpower microstrip electrical characteristics dimensions: l x w (mm) dimensions: l x w (in.) at 1960 mhz ? 1 0.300 ,50.0 ??? 27.76 x 1.70 1.093 x 0.067 ? 2 0.024 ,10.4 ??? 2.01 x 13.00 0.079 x 0.512 ? 3 0.024 ,10.4 ??? 2.06 x 13.00 0.081 x 0.512 ? 4 0.037 ,34.2 ??? 3.35 x 3.00 0.132 x 0.118 ? 5 0.046 ,34.2 ??? 4.11 x 3.00 0.162 x 0.118 ? 6 0.097 ,34.2 ??? 8.76 x 3.00 0.345 x 0.118 ? 7 0.127 ,43.6 ??? 11.63 x 2.11 0.458 x 0.083 ? 8 0.054 ,50.0 ??? 5.03 x 1.70 0.198 x 0.067 ? 9, ? 10 0.125 ,47.8 ??? 11.56 x 1.83 0.455 x 0.072 c7 1 f c9 12pf c8 0.1 f c6 10 f c13 12pf g2 v c11 1 f c10 10 f c12 0.1 f c16 1 f c14 12pf c15 0.1 f c18 100 f 50v c17 10 f d1 v v d1 g1 v j1 c1 100 f 50v c2 10 f c3 1 f dut ptma180402m 3 " 1 7 9 10 8 5 6 4 c4 0.1 f c5 12pf 1 2 c29 1.8pf 18 14 13 12 11 17 16 15 c30 1.8pf " 2 " 3 20 19 c27 10 f c25 0.1 f c24 12pf " 10 c26 1 f c28 100 f 50v v d2 c33 12pf " 5 c31 2.7pf " 4 " 7 " 9 c19 12pf c20 0.1 f c21 1 f " 8 j2 c23 100 f 50v c22 10 f r1 0 o r2 0 o r4 r3 q2 q1 " 6 c32 1pf m a 1 8 0 4 0 2 m _ 1 9 6 0 m h z _ b d _ 9 - 2 - 0 9 rf_in rf_out
data sheet 11 of 14 rev. 08, 2011-08-10 ptma180402m confidential, limited internal distribution reference circuit ?1960 mhz (cont.) assembly diagram for 1960 mhz reference circuit (not to scale) component description suggested manufacturer p/n or comment c1, c18, c23, c28 electrolytic capacitor, 100 f, 50 v digi-key pce3718ct-nd c2, c6, c10, c17, ceramic capacitor, 10 f murata grm422y5v106z050al c22, c27 c3, c7, c11, c16, ceramic capacitor, 1 f digi-key 445-1411-2-nd c21, c26 c4, c8, c12, c15, capacitor, 0.1 f digi-key 399-1267-2-nd c20, c25 c5, c9, c13, c14, ceramic capacitor, 12 pf atc 600s120jt c19, c24, c33 c29, c30, c31 ceramic capacitor, 1.8 pf atc 600s1r8ct c32 ceramic capacitor, 1.0 pf atc 100b 1r0 q1, q2 transistor in? neon technologies bcp56 r1, r2 resistor, 0 digi-key 603 r3, r4 potentiometer, 2k digi-key 3224w-202etr-nd c32 c23 c22 c21 c20 c19 c28 c27 c26 c25 c24 c31 c33 c30 c29 c1 c2 c3 c4 c5 c18 c14 c15 c16 c17 c6 c7 c8 c12 c13 c9 c10 c11 r1 ma180402m_1960 mhz_cd_9-2-09 r4 r2 q2 q1 r3 v g 1 v g2 v d2 v d1 v d1 v d2 rf_in rf_out
ptma180402m confidential, limited internal distribution data sheet 12 of 14 rev. 08, 2011-08-10 pinout diagram 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 thermal fet a180402m_pd_9-3-2009 v d2 , rf out v d2 , rf out v d2 , rf out v d2 , rf out v d2 , rf out v d2 , rf out nc nc nc nc rf in rf in v g thermal fet v d thermal fet v d1 v d1 v d1 v d1 v g1 v g2 source: plated copper heat slug on backside of package.
data sheet 13 of 14 rev. 08, 2011-08-10 ptma180402m confidential, limited internal distribution package outline specifications package pg-dso-20-63 2x 2.90 [0.114] max (2 pls) 13.00 [0.512] max 1 10 11 20 6. index pin 1 6. 14.200.30 11.00 [0.433] 9 x 1.27 = 11.43 9 x .050 = .450 1.10 [0.043] max (2 pls) 2.95 [0.116] 6.00 [0.236] top view bottom view [0.5590.012] 0.40+0.13 [0.015+0.005] 0.25mm c a b 15.900.10 [0.6260.004] 1.27 [0.050] 141 (2 pls) top/bottom all sides 11.000.10 [0.4330.004] 5. 3.50 [0.137] max see detail a 4. side view end view mss 0.950.15 [0.0370.006] 0.35 [0.014] gauge plane 0.15 [0.006] ref 0+0.1 [0+0.004] standoff 1.60 [0.063] ref 0.25 +0.07 ?0.02 [0.010 ] +0.003 ?0.001 detail a pg - dso - 20- 63_po_02 -19- 2010 diagram notes?unless otherwise speci? ed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. package dimensions: 11.0 mm by 15.9 mm by 3.35 mm. 3. jedec drawing number: mo-166. 4. does not include plastic or metal protrusion of 0.15 mm max per side. 5. does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. bottom metallization. sn plating (matte) : 5 ? 15 micron [196.85 ? 590.55 microinch]. refer to application note ?recommendations for printed circuit board assembly of in? neon dso and ssop packages? for additional information.
edition 2011-08-10 published by in neon technologies ag 81726 munich, germany ?2008 in neon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, in? neon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest in? neon technologies of? ce ( www.in neon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest in? neon technologies of? ce. in? neon technologies components may be used in life-support devices or systems only with the express written approval of in- ? neon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support devic e or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@in neon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international ptma180402m v1 confidential, limited internal distribution page subjects (major changes since last revision) data sheet 14 of 14 rev. 08, 2011-08-10 revision history: 2011-08-10 data sheet previous version: 2011-03-17, data sheet 1 revisions to rf characteristics. 2 changes to v (br)dss and r ds(on) , dc table 3, 11 corrected typos. 9 removed voltage vs. temperature graph. all miscellaneous cosmetic adjustments.

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